2026-08-29

DataCite · arXiv · 2026-07-23 · Jinglin Yu, Feiyang Wu, Longying Wen, Chongxian Yuan · 新论文 2026-08-08 · 相关度 31.4

英文原题Reliability-Aware Bayesian Optimization of 1310 nm PCSELs with FDTD Verification

中文摘要近 1310 nm 光子晶体面发射激光器（PCSEL）是用于光通信和传感的理想窄光束光源，但其最终设计优化成本高昂。微小的几何结构变化会同时改变带边共振、腔体泄漏、远场发散角以及高 Q 衰减拟合的数值稳定性，而每次全波试算都需要进行时域仿真。我们将一款商用时域有限差分求解器与针对八个局部设计变量的可靠性感知贝叶斯优化（BO）循环相结合。每次完成仿真后，都会更新用于选择下一种几何结构的代理模型。候选方案排序将波长和光束质量要求与可靠性修正指标 $Q_{\mathrm{eff}}$ 相结合，后者由求解器报告的相对拟合误差估计值 $dQ/Q$ 推导得出。在从同一参考模型开始的三次各含 80 次评估的运行中，BO 每次产生了 5—15 个通过联合筛选的候选方案。由全新模型副本重建的设计保持了 $Q_{\mathrm{eff}}=4.33\times10^6$—$7.76\times10^6$，相较基线指标提高了 60—108 倍，其波长为 1308.23—1310.90 nm，发散角约为 $0.84^{\circ}$。在预算相同的情况下，BO 获得了最高的严格筛选平均产出量（9.0 个候选方案），相比之下，差分进化为 7.0 个，拉丁超立方采样为 1.5 个，尽管对照方法偶尔也能达到峰值 $Q_{\mathrm{eff}}$。场分布图、共振光谱和局部扰动进一步揭示了一个与折射率相关的波长调控手段，以及一个与孔尺寸相关的泄漏调控手段。由此得到的 FDTD 预算能够产生一批波长兼容、光束窄且可复现的高 Q PCSEL 候选设计，而无须依赖单次过于乐观的衰减拟合。

英文摘要Near 1310 nm photonic-crystal surface-emitting lasers (PCSELs) are attractive narrow-beam sources for optical communication and sensing, but their final design refinement is costly. Small geometry changes simultaneously shift the band-edge resonance, cavity leakage, far-field divergence, and the numerical stability of a high-$Q$ decay fit, while every full-wave trial requires a time-domain simulation. We couple a commercial finite-difference time-domain solver to a reliability-aware Bayesian optimization (BO) loop over eight local design variables. Each completed simulation updates the surrogate used to choose the next geometry. Candidate ranking combines wavelength and beam-quality requirements with a reliability-adjusted metric $Q_{\mathrm{eff}}$ derived from the solver-reported relative fit-error estimate $dQ/Q$. Across three 80-evaluation runs from the same reference model, BO produced 5--15 candidates per run that passed the joint filter. Designs reconstructed from fresh model copies retained $Q_{\mathrm{eff}}=4.33\times10^6$--$7.76\times10^6$, a 60--108-fold increase over the baseline metric, at 1308.23--1310.90~nm with approximately $0.84^{\circ}$ divergence. Under equal budgets, BO gave the highest mean strict-filter yield (9.0 candidates), compared with differential evolution (7.0) and Latin-hypercube sampling (1.5), although the controls occasionally matched the peak $Q_{\mathrm{eff}}$. Field maps, resonance spectra, and local perturbations further identify an index-related wavelength handle and a hole-size-related leakage handle. The resulting FDTD budget produces a pool of wavelength-compatible, narrow-beam, and reproducible high-$Q$ PCSEL candidates without trusting a single optimistic decay fit.

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- 可转化内容：适合沉淀成验证指标或参数先验，尤其是 far field。

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Crossref · Laser & Photonics Reviews · 2026-07-23 · Tong Xu, Meixin Feng, Rui Xi, Xiaoqi Yu · 新论文 2026-07-26 · 相关度 34.0

英文原题3.2 W GaN‐Based Photonic‐Crystal Surface‐Emitting Laser

中文摘要摘要：光子晶体面发射激光器（PCSEL）凭借其独特的单模工作和窄光束发散能力，已成为 LiDAR、自由空间通信和材料加工等高功率、高亮度应用中前景广阔的光源。然而，将 PCSEL 扩展至蓝光波段仍然具有挑战性，这主要是由于 GaN 基材料的低折射率和短波长会削弱光学反馈，并增加制造难度和光散射损耗，从而导致极高的激光阈值。在本工作中，我们展示了工作波长为 430.5 nm 的无再生长瓦级 GaN 基 PCSEL。该器件采用优化的外延结构和光子晶体设计，在 GaN 衬底上制备。器件实现了 4 kA/cm² 的阈值电流密度和室温下 3.2 W 的峰值输出功率；据我们所知，这是目前报道的最高输出功率。本工作为采用简化制造工艺实现高功率可见光 PCSEL 提供了一条可行路径，并在未来的高亮度照明和显示应用中展现出巨大潜力。

英文摘要ABSTRACT Photonic‐crystal surface‐emitting lasers (PCSELs) have emerged as promising light sources for high‐power, high‐brightness applications such as LiDAR, free‐space communication, and material processing, owing to their unique capabilities for single‐mode operation and narrow beam divergence. However, extending PCSELs into the blue wavelength regime remains challenging, primarily due to the low refractive index and short wavelength of GaN‐based materials, which weakens optical feedback and increases the fabrication difficulty and optical scattering loss, resulting in very high lasing thresholds. In this work, we demonstrate regrowth‐free, watt‐class GaN‐based PCSELs operating at 430.5 nm, fabricated on GaN substrates using an optimized epitaxial structure and photonic crystal design. The device achieved a threshold current density of 4 kA/cm 2 , and a peak output power of 3.2 W at room temperature, which, to our knowledge, is the highest output power reported. This work provides a viable pathway toward high‐power visible PCSELs with simplified fabrication processes, offering significant potential for high‐brightness lighting and display applications in the future.

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Crossref · Photonics · 2026-07-11 · Jianxin Zhang, Gaoben Shi, Xiaoyun Liu, Haizhu Sun · 新论文 2026-08-08 · 相关度 15.1

英文原题A 1064 nm Deep-Etched Wide-Ridge Waveguide Slab-Coupled Photonic Crystal Semiconductor Laser

中文摘要半导体激光器是光通信、光存储及其他领域的关键器件。实现单模、高功率和高光束质量输出是激光技术的重要研究目标。传统平板耦合光波导激光器能够有效抑制高阶模式，但存在光限制因子低和脊宽受限的问题。本文提出一种 1064 nm 深刻蚀宽脊波导平板耦合光子晶体半导体激光器。在传统平板耦合光波导中引入光子晶体结构。通过数值仿真分析其光场和模式特性，验证了该结构在提高光限制因子以及利用深刻蚀宽脊波导实现单模工作方面的可行性。与传统光子晶体激光器不同，该设计为高性能光子晶体半导体激光器的设计提供了一条新路径。

英文摘要Semiconductor lasers are key devices in optical communication, optical storage and other fields. Achieving single-mode, high-power and high-beam-quality output is an important research goal in laser technology. Conventional slab-coupled optical waveguide lasers can effectively suppress higher-order modes, but suffer from a low optical confinement factor and limited ridge width. This paper proposes a 1064 nm deep-etched wide-ridge waveguide slab-coupled photonic crystal semiconductor laser. A photonic crystal structure is introduced into the conventional slab-coupled optical waveguide. The optical field and mode characteristics are analyzed by numerical simulation, verifying the feasibility of the structure in improving the optical confinement factor and realizing single-mode operation with a deep-etched wide-ridge waveguide. Different from traditional photonic crystal lasers, this design provides a new route for high-performance photonic crystal semiconductor laser design.

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Crossref · Applied Physics Letters · 2026-07-07 · Erin M. Raftery, Devon O. Lee, Daniel W. Pflug, Adrian Birge · 新论文 2026-07-09 · 相关度 35.0

英文原题Buried dielectric quasi-photonic-crystal surface-emitting lasers

中文摘要我们报道了一种准光子晶体面发射激光器（QPCSEL），其采用被高折射率外延半导体包围的亚微米低折射率埋入式介质结构来形成准光子晶体层。我们展示了埋入式介质 QPCSEL 在室温下的光泵浦激光发射，其发射波长为 1.5 μm。QPCSEL 以准周期光子晶体取代传统的周期性折射率图案，从而产生单模发射。我们的埋入式介质方案能够实现光子晶体的固态集成，同时在半导体外延再生长过程中保留复杂的图案化几何结构。

英文摘要We report a quasi-photonic-crystal surface-emitting laser (QPCSEL) that employs sub-micron, low-index buried dielectric features surrounded by high-index epitaxial semiconductor to form the quasi-photonic-crystal layer. We demonstrate photopumped lasing from a buried dielectric QPCSEL at room temperature with emission wavelength at 1.5 μm. QPCSELs replace the conventional periodic refractive index pattern with a quasi-periodic photonic crystal, which produces single mode emission. Our buried dielectric approach enables solid-state integration of the photonic crystal while preserving the complex patterned geometry during epitaxial semiconductor regrowth.

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DataCite · arXiv · 2026-06-22 · Cen Chen, Haitao Huang, Jiazhi Mao, Feifan Xu · 新论文 2026-08-08 · 相关度 31.1

英文原题DDSNet: Dual-domain Symmetry-aware Network for PCSEL Property Prediction

中文摘要高效探索光子晶体（PhC）晶格设计空间对于开发光子晶体面发射激光器至关重要。尽管耦合波理论（CWT）提供了有效的物理框架，但其计算成本对于大规模探索而言仍高得难以承受，从而推动了对神经网络代理模型的需求。然而，现有 AI 模型未能充分利用 CWT 所揭示的 PhC 单元介电图案的两个关键因素：频谱分量和非对称结构，而这两者在很大程度上决定了器件的物理特性。这种不匹配削弱了代理模型的精度和筛选可靠性，在结构敏感区域尤为明显。为解决这一问题，我们提出双域对称性感知网络（DDSNet）。该网络将平移等变频谱滤波与对称性诱导的结构先验相结合。频谱滤波在保持晶格上平移等变性的同时，将频谱归纳偏置注入视觉模型。与此同时，结构先验将晶格特征分解为与不可约表示相关且按对称性解析的分量，并在不同分支中分别处理这些分量。实验表明，DDSNet 在性能预测和高通量筛选方面显著优于现有 AI 基线模型，并在结构敏感区域表现出更高的可靠性。尤为重要的是，分量掩蔽分析显示，该网络成功学习了与物理先验一致的特定性能依赖关系。这些结果表明，DDSNet 能够有效捕捉具有物理意义的结构—性能关系，为探索 PhC 设计空间建立了高度可靠的神经网络代理模型。

英文摘要Efficient exploration of the photonic crystal (PhC) lattice design space is essential for developing photonic crystal surface-emitting lasers. While coupled-wave theory (CWT) provides an effective physical framework, its computational cost remains prohibitive for large-scale exploration, driving the demand for neural surrogates. However, existing AI models underexploit two key factors of PhC unit-cell dielectric patterns indicated by CWT: spectral components and asymmetric structures, which largely govern devices' physical properties. This mismatch weakens surrogate accuracy and screening reliability, especially in structure-sensitive regions. To address this, we propose the Dual-Domain Symmetry-Aware Network (DDSNet). It integrates translation-equivariant spectral filtering with a symmetry-induced structural prior. The spectral filtering injects a spectral inductive bias into vision model while preserving translation equivariance on lattices. Meanwhile, the structural prior decomposes lattice features into irreducible representation-associated, symmetry-resolved components and processes them in separate branches. Experiments demonstrate that DDSNet significantly outperforms existing AI baselines in property prediction and high-throughput screening, exhibiting superior reliability in structure-sensitive regions. Crucially, component masking analyses reveal that the network successfully learns property-specific dependencies aligned with physical priors. These results indicate that DDSNet effectively captures physically meaningful structure-property relationships, establishing a highly reliable neural surrogate for PhC design space exploration.

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- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
- 可用线索：CWT。
- 可转化内容：先判断能否变成一个仿真 case、baseline、验证指标或参数先验。

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OpenAIRE · Applied Physics Letters · 2026-06-15 · Zhiwei Sun, Bolin Zhou, Yuzhen Zheng, Yongchen Miao · 新论文 2026-06-19 · 相关度 42.6

英文原题Regrowth-free blue GaN-based photonic crystal surface-emitting lasers with triangular air holes

中文摘要我们报道了采用无再生长方法制备的室温蓝光 GaN 光子晶体面发射激光器（PCSEL）二极管的成功实现。通过采用具有改进型三角形空气孔的方形晶格光子晶体结构，我们实现了稳健的二维单模激光振荡。该器件的阈值电流密度为 5.2 kA/cm²，并发射高斯形光束，其光束发散角极低，测得为 1.15 mrad（0.066°）。此外，三角形空气孔的对称性破缺特性使器件形成了垂直于三角形长边的稳定线偏振。本工作表明，采用具有简单孔形的无再生长制造工艺可以实现高光束质量的蓝光 PCSEL，为高性能蓝光激光光源铺平了道路。

英文摘要We report the successful realization of a room-temperature blue GaN photonic crystal surface-emitting laser (PCSEL) diode fabricated using a regrowth-free approach. By employing a square lattice photonic crystal structure with modified triangular air holes, we achieve robust two-dimensional single-mode lasing. The device operates with a threshold current density of 5.2 kA/cm2 and emits a Gaussian-shaped beam with exceptionally low beam divergence, measured at 1.15 mrad (0.066°). Furthermore, the symmetry-breaking nature of the triangular air holes enforces a stable linear polarization perpendicular to the long edge of the triangle. This work demonstrates that high-beam-quality blue PCSELs can be achieved using non-regrowth fabrication processes with simple hole geometry, paving the way for high-performance blue laser sources.

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- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
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- 可转化内容：先判断能否变成一个仿真 case、baseline、验证指标或参数先验。

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OpenAIRE · Applied Optics · 2026-06-11 · Siyu Chen, Jingwei Chen, Xingyu Liu, Zhiyuan Jiang · 新论文 2026-06-15 · 相关度 32.5

英文原题Simulation study of a low-threshold, high-efficiency 1.55 µm InP PCSEL enabled by a bottom metal-capped DBR, peripheral DBRs, and a shifted triple-hole photonic crystal

中文摘要1.55 µm 光子晶体面发射激光器（PCSEL）凭借人眼安全性和低光纤损耗，对光通信和 LiDAR 应用极具吸引力。然而，其性能受到阈值增益与斜率效率之间权衡的限制，同时也受传统分布式布拉格反射镜（DBR）结构的反射率和相位控制能力所限。据我们所知，在本工作中，我们对一种新型 InP 基 PCSEL 设计进行了理论与数值研究。具体而言，金属封盖 DBR 由三对 SiO₂/TiO₂ 层和一层 Au 构成，在提供高反射率的同时大幅降低了制造复杂度。此外，在光子晶体（PC）区域周围引入 DBR，以抑制面内损耗并增强激光模式的反馈。进一步地，错位三孔光子晶体能够灵活控制面内和垂直耦合强度，从而实现阈值增益与斜率效率之间的优化平衡。采用传输矩阵法和三维耦合波理论（3D-CWT）评估器件性能。结果表明，优化后的结构具有 16 cm⁻¹ 的低激光振荡阈值增益及相应的 76 cm⁻¹ 阈值材料增益，同时具有 0.18 W/A 的高斜率效率，为工作于 1.55 µm 的高性能 InP 基 PCSEL 提供了一种前景广阔的理论设计策略。

英文摘要Photonic-crystal surface-emitting lasers (PCSELs) at 1.55 µm are highly attractive for optical communication and LiDAR applications owing to eye safety and low fiber loss. However, their performance is limited by the trade-off between threshold gain and slope efficiency, as well as by the reflectivity and phase control of conventional distributed Bragg reflector (DBR) structures. In this work, we present a theoretical and numerical investigation of a novel InP-based PCSEL design, to our knowledge. Specifically, the metal-capped DBR is composed of three pairs of SiO 2 /TiO 2 layers and an Au layer, providing high reflectivity while substantially reducing fabrication complexity. In addition, DBRs surrounding the photonic crystal (PC) region are introduced to suppress in-plane loss and enhance the feedback of the lasing mode. Furthermore, a shifted triple-hole photonic crystal enables flexible control of the in-plane and vertical coupling strengths, achieving an optimized balance between threshold gain and slope efficiency. The device performance is evaluated using the transfer-matrix method and three-dimensional coupled-wave theory (3D-CWT). As a result, the optimized structure exhibits a low threshold gain for lasing oscillation of 16cm −1 and a corresponding threshold material gain of 76cm −1 , together with a high slope efficiency of 0.18 W/A, providing a promising theoretical design strategy for high-performance InP-based PCSELs operating at 1.55 µm.

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- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
- 可用线索：CWT。
- 可转化内容：先判断能否变成一个仿真 case、baseline、验证指标或参数先验。

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OpenAIRE · Optics Express · 2026-06-11 · Qingyuan Zhang, Ming Lü, Jiang Hu, Qi Dai · 新论文 2026-06-13 · 相关度 28.0

英文原题Size scaling law for radiation losses of modes in photonic crystal surface emitting devices

中文摘要光子晶体面发射激光器（PCSEL）因能够产生超高功率、低发散角的激光束而受到广泛关注。这是因为它们能够在比传统半导体激光器大数个数量级的体积内支持高功率单模激光振荡。PCSEL 有限的横向尺寸是限制其激光模式体积并进而限制其输出功率的主要因素。我们证明，总腔损耗 α = α⊥ + α∥ 与器件尺寸 L 之间的标度关系为：表面辐射损耗满足 α⊥ ∼ O(L⁻²)，而边缘辐射损耗满足 α∥ ∼ O(L⁻³)。这两种标度关系均可通过能带图中复频率 ω(k) 的二阶展开加以解释。我们的结果为设计大面积类 PCSEL 器件时估算尺寸效应提供了指导。

英文摘要Photonic-crystal surface-emitting lasers (PCSELs) have garnered significant attention due to their ability to generate laser beams with ultra-high power and low divergence. This is because they support high-power single-mode lasing with volumes orders of magnitude larger than those of conventional semiconductor lasers. The finite lateral size in a PCSEL is a primary factor limiting its lasing mode volume and, consequently, its output power. We demonstrate that the scaling relation between the total cavity loss α = α ⊥ + α ∥ and the device size L is such that the surface radiation loss scales as α ⊥ ∼ O ( L −2 ), while the edge radiation loss α ∥ ∼ O ( L −3 ). Both scaling relations can be explained by the second-order expansions of the complex frequency ω ( k ) of the band diagram. Our results provide a guideline for estimating the size effect when designing large-area PCSEL-like devices.

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- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
- 可用线索：先看是否能抽出结构参数、指标定义或仿真设置。
- 可转化内容：适合沉淀成验证指标或参数先验，尤其是 mode volume。

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Crossref · 2026 International Conference Laser Optics (ICLO) · 2026-06-01 · I.V. Oreshko, V.V. Zolotarev, S.O. Slipchenko, A.S. Nekrasov · 新论文 2026-08-09 · 相关度 15.5

英文原题Surface-emitting semiconductor IR laser with resonator based on 2D photonic crystal

为什么与你有关
为什么与你有关：
- 主线关联：更偏photonics / photonic crystal，可作为 PCSEL 周边器件物理或数值方法补充。
- 可用线索：先看是否能抽出结构参数、指标定义或仿真设置。
- 可转化内容：先判断能否变成一个仿真 case、baseline、验证指标或参数先验。

今日必看：优先判断是否进入 PCSEL / CWT / 仿真建模文献库。

OpenAIRE · Journal of Semiconductors · 2026-05-01 · Yuzhen Zheng, Zhiwei Sun, Tong Xu, Bolin Zhou · 新论文 2026-06-09 · 相关度 26.8

英文原题Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs

中文摘要摘要：我们展示了两种无需外延再生长制备的 GaN 基面发射激光器（SEL）在室温下的脉冲激光振荡，并直接比较了圆形光栅（CGSEL）设计与光子晶体（PCSEL）设计。这些器件通过将光子结构直接刻蚀进 p-GaN 包覆层并采用图案化氧化铟锡（ITO）顶部接触来实现。两种设计在脉冲电流注入下均于 438 nm 附近产生激光振荡。包含中心缺陷的 CGSEL 通过耦合至带隙缺陷模式，实现了低阈值电流密度（<1 kA/cm²）和小发散角（约 0.15°）。相比之下，PCSEL 具有较高的阈值电流密度，并在一维带边模式上产生激光振荡，形成十字形远场图案。这些结果证实，无再生长方法是实现可制造 GaN SEL 的可行路径。关键在于，这项比较研究确定了 CGSEL 缺陷模式设计是在低限制外延结构中实现高性能激光振荡的一条更稳健路径。

英文摘要Abstract We demonstrate room-temperature pulsed lasing of two types of GaN-based surface emitting lasers (SEL) fabricated without epitaxial regrowth. We present a direct comparison between a circular grating (CGSEL) and a photonic crystal (PCSEL) design. The devices are realized by etching the photonic structures directly into the p-GaN cladding, and utilizing a patterned indium tin oxide (ITO) top contact. Both designs exhibit lasing near 438 nm under pulsed current injection. The CGSEL, incorporating a central defect, achieves a low threshold current density (<1 kA/cm 2 ) and a small divergence angle (≈0.15°) by coupling to a bandgap defect mode. In contrast, the PCSEL shows a higher threshold current density and lases on a 1D band-edge mode, resulting in a cross-shaped far-field pattern. These results confirm the regrowth-free method as a viable route for manufacturable GaN SELs. Crucially, the comparative study identifies the CGSEL defect-mode design as a more robust path toward high-performance lasing in low-confinement epitaxial structures.

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- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
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- 可转化内容：适合沉淀成验证指标或参数先验，尤其是 far field / divergence angle。

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Crossref · IEEE Transactions on Nuclear Science · 2026-04-01 · Shota Kimura, Ryohei Morita, Takuya Inoue, Yosuke Hashimoto · 新论文 2026-08-09 · 相关度 17.7

英文原题Radiation Tolerance of Photonic-Crystal Surface-Emitting Lasers for Space Applications

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- 主线关联：更偏photonics / photonic crystal，可作为 PCSEL 周边器件物理或数值方法补充。
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Crossref · Gallium Nitride Materials and Devices XXI · 2026-03-05 · Åsa Haglund, Doğukan Apaydın, Lars Persson, Moritz Riedel · 新论文 2026-08-09 · 相关度 15.0

英文原题Deep-ultraviolet photonic crystal surface-emitting lasers

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- 主线关联：更偏photonics / photonic crystal，可作为 PCSEL 周边器件物理或数值方法补充。
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OpenAIRE · Solid State Lasers XXXV: Technology and Devices · 2026-03-04 · Petros Androvitsaneas, Zhongze Ren, Pavlo Ivanov, Anna O'Dowd · 新论文 2026-08-09 · 相关度 22.6

英文原题Photonic crystal surface emitting laser bandstructure investigation using Fourier microscopy

中文摘要光子晶体面发射激光器（PCSEL）开启了高功率单模半导体激光振荡的新阶段。与作为大规模生产半导体激光器主力的垂直腔面发射激光器（VCSEL）不同，PCSEL 无须为了产生单模输出而受到小尺寸和低输出功率的限制。在本工作中，我们使用傅里叶显微镜提取 PCSEL 光子能带结构的详细轮廓。这项工作加深了我们对这些新型激光器结构的理解，并将促成利用 PCSEL 精密光子工程的新型设计原理。我们进行了详细的白光反射率测量，并将其结果与同一器件在傅里叶显微镜中通过电致发光获得的光学特性进行比较。

英文摘要Photonic crystal surface emitting lasers (PCSELs) have brought the onset of high-power single mode semiconductor lasing. In contrast to vertical cavity surface emitting lasers (VCSELs), the workhorse of mass-produced semiconductor lasers, PCSELS are not restricted in small sizes and output powers in order to produce a single mode output. In this work, we are using Fourier microscopy to extract a detailed outline of the PCSELs photonic band structure. This work furthers our understanding of these novel laser structures and will lead to novel design principles for utilizing precise photonic engineering of PCSELs. We perform detailed white light reflectivity and compare the results to the optical properties from electroluminescence of the same devices in a Fourier microscope.

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OpenAIRE · IEEE Photonics Technology Letters · 2026-02-15 · Ziyuan Liao, Yufei Wang, Yuan Ma, Yingqiu Dai · 新论文 2026-06-28 · 相关度 34.0

英文原题Quantum Cascade Photonic Crystal Surface-Emitting Laser With Lateral Coupling Cavity at 9.4 μ m

中文摘要光子晶体（PC）是实现面发射量子级联激光器的优良方案。光子晶体阵列的尺寸与成本和散热均密切相关。我们报道了具有紧凑 PC 尺寸、工作于 9.4 μm 的量子级联光子晶体面发射激光器（QC-PCSEL），其峰值输出功率达到 140 mW。PC 结构采用从表面进行深刻蚀的工艺制备。通过引入椭圆结构 PC 并调节轴比和填充因子，打破了面内对称性并调控了 Q factor，从而优化了输出功率和单模性能。通过引入横向耦合腔补偿寄生损耗，可以降低阈值电流。此外，我们通过特殊的聚焦离子束（FIB）二次刻蚀研究了 PC 深度对激光器性能的影响。结果表明，可以精确优化其深度以获得最大输出功率，以及相应降低的阈值电流密度和提高的斜率效率。

英文摘要Photonic crystal (PC) is an excellent solution to realize a surface-emitting quantum cascade laser. The size of photonic crystal array has a severe relevance with both cost and heat dissipation. We report quantum cascade photonic crystal surface-emitting lasers (QC-PCSELs) at $9.4~\mu $ m with compact PC dimension, demonstrating a peak output power of 140 mW. The PC structure is fabricated by deep-etching process from the surface. Through introducing an elliptical structure PC and adjusting the axis ratio and filling factor, in-plane symmetry is broken and the Q factors have been tuned, and the output power and single-mode performance have been optimized. And by introducing lateral coupling cavity to compensate the parasitic loss, the threshold current can be reduced. Furthermore, we investigate the influence of PC depth on the performance of laser by a special focused ion beam (FIB) secondary etching. The results show the depth can be precisely optimized to obtain the maximum output power and the corresponding reduced threshold current density and increased slope efficiency.

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- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
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OpenAIRE · Optics · 2026-02-02 · Bochao Zhang, Minyan Zhang, Lei Li, Jianglang Bie · 新论文 2026-08-09 · 相关度 42.9

英文原题Design of Double-Lattice Photonic Crystal of DUV Laser by ANN-RBF Neural Network

中文摘要本研究设计了一种无需使用任何分布式布拉格反射镜（DBR）即可实现深紫外激光振荡的双晶格光子晶体结构，该器件被称为光子晶体面发射激光器（PCSEL）。采用平面波展开（PWE）法研究了各种结构参数对共振波长的影响。利用随机森林算法，我们确定晶格常数对共振波长的重要性为 95.24%。此外，我们通过径向基函数（RBF）网络算法，实现了从目标波长到最优结构参数的双晶格光子晶体逆向设计。对极限学习机（ELM）和反向传播（BP）算法的比较分析表明，基于 RBF 的性能明显优于其他算法的训练结果。在训练结果中，测试集晶格常数的平均绝对误差（MAE）为 0.7610 nm，均方根误差（RMSE）为 1.143×10⁻³ nm，平均绝对相对误差（MARE）为 5.489×10⁻³。我们验证了该算法的可靠性，并设计了 13 组具有不同外延结构的光子晶体。与平面波展开法相比，其均方误差（MSE）为 0.6188 nm²。本工作证明了该方法在 GaN 基器件的不同波段和外延结构中的适用性，为深紫外 PCSEL 的快速迭代提供了一种新方法。

英文摘要In this study, a double-lattice photonic crystal structure was designed to achieve deep ultraviolet lasing without the use of any Distributed Bragg Reflector (DBR), which is called a photonic-crystal surface-emitting laser (PCSEL). The plane wave expansion (PWE) method was used to study the influence of various structural parameters on the resonant wavelength. Utilizing the random forest algorithm, we determined that the importance of the lattice constant to the resonant wavelength is 95.24%. Furthermore, we realized the reverse design of double-lattice photonic crystals from the target wavelength to optimal structural parameters through a radial basis function (RBF) network algorithm. Comparative analysis of the extreme learning machine (ELM) and back propagation (BP) algorithms demonstrated that RBF-based performance was notably superior to the training outcomes of other algorithms. The mean absolute error (MAE) of the lattice constant of the test set in the training results was 0.7610 nm, root mean square error (RMSE) was 1.143×10-3 nm, and mean absolute relative error (MARE) was 5.489×10-3. We verified the reliability of the algorithm and designed 13 groups of photonic crystals with different epitaxial structures. The mean square error (MSE) was 0.6188 nm2 compared with that of the plane wave expansion method. This work demonstrates applicability across various wavebands and epitaxial structures in GaN-based devices, providing a novel approach for the rapid iteration of deep ultraviolet PCSELs.

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为什么与你有关：
- 主线关联：直接服务 PCSEL 方向，优先看结构参数、耦合机制、出光/远场和验证口径。
- 可用线索：先看是否能抽出结构参数、指标定义或仿真设置。
- 可转化内容：先判断能否变成一个仿真 case、baseline、验证指标或参数先验。

今日必看：优先判断是否进入 PCSEL / CWT / 仿真建模文献库。